• DocumentCode
    2731369
  • Title

    Investigation of Thermal Neutron Induced Soft Error Rates in Commercial Srams with 0.35 μm to 90 nm Technologies

  • Author

    Olmos, Marcos ; Gaillard, Remi ; Van Overberghe, A. ; Beaucour, Jérôme ; Wen, ShiJie ; Chung, Sung

  • Author_Institution
    iROC Technol., Grenoble
  • fYear
    2006
  • fDate
    26-30 March 2006
  • Firstpage
    212
  • Lastpage
    216
  • Abstract
    Measurement of soft error rates (SER) often commercial SRAMs of 0.35 μm to 90 nm technologies have been completed at the Institut Laue-Langevin (ILL) neutron facility. Results establish the sensitivity of old and recent SRAM technologies showing the impact of 10B concentrations in BPSG and p-type regions. 10B results are also compared to high-energy neutron SER
  • Keywords
    SRAM chips; neutron effects; sensitivity; 0.35 micron; 90 nm; SER; commercial SRAM; high-energy neutron soft error rates; sensitivity; soft error rates measurement; thermal neutron induced soft error rates; Boron; Doping; Error analysis; Neutrons; Particle beams; Planarization; Random access memory; Single event upset; Testing; Tomography; 10B; boron; cross-section; single-event upset (SEU); soft error; thermal neutrons;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-9498-4
  • Electronic_ISBN
    0-7803-9499-2
  • Type

    conf

  • DOI
    10.1109/RELPHY.2006.251219
  • Filename
    4017160
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2731369