DocumentCode :
2731488
Title :
TSV manufacturing yield and hidden costs for 3D IC integration
Author :
Lau, John H.
Author_Institution :
Electron. & Optoelectron. Labs., Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear :
2010
fDate :
1-4 June 2010
Firstpage :
1031
Lastpage :
1042
Abstract :
3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general, the TSV (through-silicon-via) separates the 3D IC packaging and 3D IC/Si integrations, i.e., the latter two use TSV, but 3D IC packaging does not. TSV for 3D integration is >26 years old technology, which (with a new concept that every chip could have two active surfaces) is the focus of this study. Emphasis is placed on the TSV manufacturing yield and hidden costs. A 3D integration roadmap is also provided.
Keywords :
Assembly; Circuit testing; Costs; Integrated circuit packaging; Integrated circuit testing; Manufacturing; Mass production; Stacking; Three-dimensional integrated circuits; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC), 2010 Proceedings 60th
Conference_Location :
Las Vegas, NV, USA
ISSN :
0569-5503
Print_ISBN :
978-1-4244-6410-4
Electronic_ISBN :
0569-5503
Type :
conf
DOI :
10.1109/ECTC.2010.5490828
Filename :
5490828
Link To Document :
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