Title :
Ultra-thin Gate Dielectric Plasma Charging Damage in SOI Technology
Author :
Lai, W. ; Harmon, D. ; Hook, T. ; Ontalus, V. ; Gambino, J.
Author_Institution :
IBM Syst. & Technol. Group, Essex Junction, VT
Abstract :
It was previously demonstrated that SOI MOSFET devices are more robust with respect to plasma process charging damage than bulk MOSFET devices. In this work, charging damage to the gate dielectric of an SOI device is induced by attaching different-area interconnect antennas to the gate and the diffusion nodes, and/or by attaching identically configured, but widely separated antennas to the nodes
Keywords :
MOSFET; antennas; dielectric devices; leakage currents; semiconductor device reliability; silicon-on-insulator; SOI technology; diffusion node; gate dielectric reliability; gate leakage; gate node; interconnect antennas; plasma charging damage; ultra thin gate dielectric; Dielectric devices; Electrons; Gate leakage; Integrated circuit interconnections; Joining processes; MOSFET circuits; Plasma devices; Plasma materials processing; Plasma sources; Robustness; SOI; gate dielectric reliability; gate leakage; plasma charging damage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251246
