DocumentCode :
2731889
Title :
Oxide Thinning in Shallow Trench Isolation
Author :
Ghidini, Gabriella ; Bottini, Roberta ; Brazzelli, Daniela ; Galbiati, Nadia ; Mica, Isabella ; Morini, Adelaide ; Pavan, Alessia ; Polignano, Maria Luisa ; Vitali, Maria Elena
Author_Institution :
Central R&D, STMicroelectron., Agrate Brianza
fYear :
2006
fDate :
26-30 March 2006
Firstpage :
379
Lastpage :
384
Abstract :
Aim of this work is to study the thinning of thick HV gate oxides in flash and embedded flash processes due to the shallow trench isolation (STI) induced stress on oxide growth
Keywords :
high-voltage engineering; isolation technology; semiconductor growth; semiconductor thin films; embedded flash process; oxide growth; oxide thinning; shallow trench isolation; thick HV gate oxides; Capacitors; Compressive stress; Current density; Oxidation; Research and development; Residual stresses; Temperature; Tensile stress; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
Type :
conf
DOI :
10.1109/RELPHY.2006.251248
Filename :
4017188
Link To Document :
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