Title :
Proceedings IEEE Lester Eastman Conference on High Performance Devices (Cat. No.02CH37365)
Keywords :
III-V semiconductors; bipolar transistors; field effect transistors; gallium compounds; high electron mobility transistors; microwave power transistors; power amplifiers; power transistors; semiconductor device manufacture; semiconductor device measurement; semiconductor device models; semiconductor device testing; silicon compounds; wide band gap semiconductors; ABCS materials/devices; FET; GaN; GaN devices; HEMT; SiC; SiC devices; bipolar transistors; compound semiconductor research; high performance devices; high-speed process technologies; microwave power devices; power amplifiers; power transistors;
Conference_Titel :
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Conference_Location :
Newark, DE, USA
Print_ISBN :
0-7803-7478-9
DOI :
10.1109/LECHPD.2002.1146722
