• DocumentCode
    2732402
  • Title

    Realistic Projections of Product Fails from NBTI and TDDB

  • Author

    Haggag, A. ; Moosa, M. ; Liu, N. ; Burnett, D. ; Abeln, G. ; Kuffler, M. ; Forbes, K. ; Schani, P. ; Shroff, M. ; Hall, M. ; Paquette, C. ; Anderson, G. ; Pan, D. ; Cox, K. ; Higman, J. ; Mendicino, M. ; Venkatesan, S.

  • Author_Institution
    Freescale Semicond. Inc., Austin, TX
  • fYear
    2006
  • fDate
    26-30 March 2006
  • Firstpage
    541
  • Lastpage
    544
  • Abstract
    Statistical models for deconvolving the effects of competing mechanisms on product failures are presented. Realistic projections of product fails are demonstrated on high performance microprocessors by quantifying the contribution of NBTI, TDDB and extrinsic fail mechanisms. In particular, it is shown that transistor shifts due to NBTI manifest as population tails in the product´s minimum operating voltage (Vmin) distribution, while TDDB manifests as single-bit or logic failures that constitute a separate sub-population. NBTI failures are characterized by lognormal statistics combined with a slower degradation rate (Deltat ~ t0.15 -t0.25), in contrast to TDDB failures that follow extreme-value statistics and exhibit a faster degradation rate (DeltaVt ~ t0.5)
  • Keywords
    SRAM chips; circuit stability; failure analysis; log normal distribution; semiconductor device breakdown; semiconductor device reliability; NBTI failures; TDDB failures; competing mechanism effects; extreme-value statistics; extrinsic fail mechanisms; high performance microprocessors; logic failures; lognormal statistics; operating voltage distribution; product failure projection; single-bit failures; statistical models; transistor shifts; Current density; Degradation; Dielectrics; Gate leakage; Leakage current; Niobium compounds; Plasma temperature; Stress; Titanium compounds; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-9498-4
  • Electronic_ISBN
    0-7803-9499-2
  • Type

    conf

  • DOI
    10.1109/RELPHY.2006.251276
  • Filename
    4017217