High Brightness Ingan Leds Degradation at High Injection Current Bias

Author

Levada, S. ; Meneghini, Matteo ; Zanoni, Enrico ; Buso, Simone ; Spiazzi, Giorgio ; Meneghesso, Gaudenzio

Author_Institution

Dept. of Inf. Eng., Padova Univ.

fYear

2006

fDate

26-30 March 2006

Firstpage

615

Lastpage

616

Abstract

In this work, we report on the results of a reliability evaluation, in terms of electrical characteristics, stability and optical output power maintenance carried out on high brightness GaN/InGaN blue LEDs. Constant and pulsed bias where investigated over devices with and without heat sink in order to identify the influence of self-heating on the devices reliability. Several degradation modes have been identified such as increase of reverse and generation/recombination current, increase of the series resistance and decrease in the optical emitted power

Keywords

III-V semiconductors; brightness; gallium compounds; indium compounds; light emitting diodes; semiconductor device reliability; GaN-InGaN; LED degradation; LED reliability; blue LED; devices reliability; electrical characteristics; generation current; high brightness; high injection current bias; optical output power maintenance; pulsed bias; recombination current; reliability evaluation; stability; Brightness; Degradation; Electric variables; Gallium nitride; Heat sinks; Light emitting diodes; Maintenance; Optical pulses; Power generation; Stability; GaN; High Brightness; LED Reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9498-4

Electronic_ISBN

0-7803-9499-2

Type

conf

DOI

10.1109/RELPHY.2006.251289

Filename

4017230