Title :
Accurate Characterization on Intrinsic Gate Oxide Reliability using Voltage Ramp Tests
Author :
Fan, S.C. ; Lin, J.C. ; Oates, A.S.
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsin-Chu
Abstract :
We show that voltage ramp testing of gate oxides exhibits exactly the same physics as constant voltage testing (TDDB). Intrinsic oxide reliability may, therefore, be accurately assessed from rapid ramp voltage tests. Accurate conversion from ramp voltage to constant voltage testing can also be achieved in the range 1.6 to 28nm, indicating that voltage ramp testing can be used to replace time-consuming constant voltage tests
Keywords :
semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; TDDB; accurate characterization; constant voltage testing; gate oxides; intrinsic gate oxide reliability; intrinsic oxide reliability; voltage ramp testing; Acceleration; Breakdown voltage; Current measurement; Design for quality; Electric breakdown; Manufacturing industries; Physics; Semiconductor device manufacture; Semiconductor device reliability; Semiconductor device testing;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251294
