Title :
The Impact of Inner Pickup on ESD Robustness of Multi-Finger NMOS in Nanoscale CMOS Technology
Author :
Ker, Ming-Dou ; Hsu, Hsin-Chyh
Author_Institution :
Nanoelectron. & Gigascale Syst. Lab., Nat. Chiao-Tung Univ., Hsinchu
Abstract :
The impact of pickup structure on ESD robustness of multi-finger MOSFET devices in the nanoscale CMOS process is investigated in this work with 1.2-V and 2.5-V devices in a 130-nm CMOS process. The multi-finger MOSFET device without the pickup structure inserted into its source region can sustain a much higher ESD level and more compact layout area for I/O cells
Keywords :
MOSFET; electrostatic discharge; nanoelectronics; 1.2 V; 130 nm; 2.5 V; ESD robustness; I/O cells; electrostatic discharge; inner pickup structure; multifinger MOSFET; multifinger NMOS; nanoscale CMOS technology; CMOS process; CMOS technology; Electrostatic discharge; Fingers; MOS devices; MOSFET circuits; Nanoscale devices; Pulse measurements; Robustness; Voltage; electrostatic discharge (ESD); layout; multi-finger MOSFET; pickup structure;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251297
