Microwave power SiC MESFETs and GaN HEMTs

Author

Zhang, A. Ping ; Rowland, L.B. ; Kaminsky, E.B. ; Beaupre, R.A. ; Garrett, Joseph L.

Author_Institution

Gen. Electr. Global Res. Center, Niskayuna, NY, USA

fYear

2002

fDate

6-8 Aug. 2002

Firstpage

181

Lastpage

185

Abstract

We have fabricated SiC MESFETs with more than 60 W of output power at 450 MHz from single 21.6 mm gate periphery devices (2.9 W/mm) and 27 W of output power at 3 GHz from single 14.4 mm SiC MESFET devices (1.9 W/mm). We have also demonstrated more than 6.7 W/mm CW power from 400 μm GaN/AlGaN HEMT devices for X band (10 GHz) applications. These excellent device performances have been attributed to the improved substrate and epitaxial film quality, optimized device thermal management, and enhanced device fabrication technologies. The substrates and epitaxial films from different sources were compared and some showed significant less SiC substrate micropipes confirmed by X-ray topography and epitaxial defects characterized by optical defect mapping.

Keywords

III-V semiconductors; UHF field effect transistors; X-ray topography; gallium compounds; microwave power transistors; power HEMT; power MESFET; semiconductor device measurement; semiconductor device models; silicon compounds; thermal analysis; thermal management (packaging); wide band gap semiconductors; 10 GHz; 14.4 mm; 21.6 mm; 27 W; 3 GHz; 400 micron; 450 MHz; 60 W; GaN HEMT CW power; GaN-AlGaN; SiC; SiC MESFET output power; SiC substrate micropipes; X band applications; X-ray topography; device gate periphery size; epitaxial defects; microwave power transistors; optical defect mapping; substrate/epitaxial film quality; thermal management optimization; thermal simulation models; Gallium nitride; HEMTs; MESFETs; MODFETs; Microwave devices; Optical films; Power generation; Silicon carbide; Substrates; Thermal management;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

0-7803-7478-9

Type

conf

DOI

10.1109/LECHPD.2002.1146748

Filename

1146748