DocumentCode
2732936
Title
RF 4H-SiC bipolar junction transistors
Author
Perez-Wurfl, Ivan ; Konstantinov, Andrey ; Torvik, John ; Van Zeghbroeck, B.
Author_Institution
Colorado Univ., Boulder, CO, USA
fYear
2002
fDate
6-8 Aug. 2002
Firstpage
193
Lastpage
200
Abstract
We report on the progress towards a silicon carbide (SiC) bipolar transistor aimed at operation at RF frequencies up to 3 GHz. Devices with a 5 μm emitter stripe width were fabricated and tested on-chip with cascade probes and an HP8510C network analyzer. These devices have an ft/fmax of 0.6/0.2GHz. To best of our knowledge the devices represent a first demonstration of an RF 4H-SiC BJT.
Keywords
S-parameters; UHF bipolar transistors; power bipolar transistors; semiconductor device measurement; silicon compounds; sputter etching; wide band gap semiconductors; 200 MHz; 3 GHz; 600 MHz; DC characteristics; L-band; RF 4H-SiC BJT; RF characteristics; S-band; SiC; SiC:N-SiC:Al-SiC:N; double mesa BJT structure; fabrication procedure; n-type 4H-SiC substrate; power RF devices; Aluminum; Breakdown voltage; Etching; Fabrication; Gallium arsenide; Nitrogen; Radio frequency; Silicon carbide; Testing; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on
Print_ISBN
0-7803-7478-9
Type
conf
DOI
10.1109/LECHPD.2002.1146750
Filename
1146750
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