Title :
Identification and Layout Modification of Copper/Low k Interconnect Dielectric Reliability Assessment by using RVDB Test
Author :
Lin, Tom M Z ; Hsu, W.M. ; Lin, S.R. ; Wang, Robin C J ; Chiu, C.C. ; Wu, Kenneth
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsinchu
Abstract :
Wafer-level ramped voltage to dielectric breakdown testing (RVDB) on copper/low k interconnect dielectrics has been used for reliability assessment and is motivated by practical needs for shortened test cycle time and large sampling for accurate statistical characterization. This work has identified a meaningful correlation between RVDB and TDDB (time dependent dielectric breakdown), which demonstrates the capabilities of RVDB for reasonable lifetime projection. Further analysis using the finite element method (FEM) has shown that layout modification is necessary to eliminate the impact of field enhancements at the metal line-end. RVDB and TDDB testing on such modified structures characterize well the intrinsic reliability behavior of interconnect dielectrics
Keywords :
copper; dielectric materials; electric breakdown; finite element analysis; integrated circuit interconnections; integrated circuit reliability; integrated circuit testing; Cu; RVDB test; copper interconnect; dielectric breakdown testing; dielectric reliability assessment; electric field simulation; finite element method; identification modification; interconnect dielectrics; layout modification; low k interconnect; ramped voltage testing; statistical characterization; test cycle time; time dependent dielectric breakdown; Breakdown voltage; Circuit testing; Copper; Dielectric breakdown; Integrated circuit interconnections; Life testing; Semiconductor device manufacture; Semiconductor device testing; Stress; Temperature; copper/low-k interconnect; electric field simulation; ramped voltage to dielectric breakdown (RVDB);
Conference_Titel :
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9498-4
Electronic_ISBN :
0-7803-9499-2
DOI :
10.1109/RELPHY.2006.251325
