Study on the Characteristics of S21 and EMI on a Shifted Electromagnetic Band Gap (EBG) Structure

Author

Nara, Shigeo

Author_Institution

Corp. Res. & Technol. Dev. Group, Opto & Electron. Element Technol. Res. Center, Fuji Xerox Co., Ltd., Ebina

fYear

2009

fDate

12-16 Jan. 2009

Firstpage

201

Lastpage

204

Abstract

AI-EBGs attenuate the through characteristics with broad bands of high frequency. AI-EBGs have structures in which sections of low characteristic impedance and high characteristic impedance are arranged periodically. However, the characteristics of radiated EMI of AI-EBGs are not well known. In this study, the characteristics of S₂₁ and EMI are examined when the patch and the branch sizes are varied while the size of the printed circuit board and the number of patches are kept constant. In addition, the characteristics of S₂₁ and EMI are examined when the dielectric thickness is varied. An AI-EBG structure with a thin dielectric is found to give the optimal S₂₁ and EMI characteristics. Finally, a shifted EBG structure is proposed.

Keywords

electromagnetic interference; photonic band gap; printed circuits; AI-EBG; EMI; printed circuit board; shifted electromagnetic band gap structure; Coupling circuits; Dielectric substrates; Digital circuits; Electromagnetic interference; Frequency; Geometry; Impedance; Metamaterials; Periodic structures; Printed circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility, 2009 20th International Zurich Symposium on

Conference_Location

Zurich

Print_ISBN

978-3-9523286-4-4

Type

conf

DOI

10.1109/EMCZUR.2009.4783425

Filename

4783425