Optimization of group V switching times for InGaP/GaAs heterostructures grown by LP-MOCVD

Author

Yang, Q. ; Hartmann, Q.J. ; Curtis, A.P. ; Lin, C. ; Ahmari, D.A. ; Scott, D. ; Kuo, H.C. ; Chen, H. ; Stillman, G.E.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

95

Lastpage

98

Abstract

We studied the effect of group V switching times on the formation of interfacial layers in InGaP/GaAs heterostructures grown by LP-MOCVD using low temperature photoluminescence (PL), double crystal X-ray diffraction (DCXRD) and high resolution transmission electron microscopy (HRTEM). Due to the severe substitution process of P by As, the quality of InGaP-to-GaAs interface was very sensitive to switching times. By optimizing the switching conditions, we were able to minimize the interfacial layers to one monolayer (ML) of In_0.5Ga_0.5As at the GaAs-to-InGaP interface and 1 ML of In_0.65Ga _0.15P_0.15As_0.85 at the InGaP-to-GaAs interface. Heterojunction bipolar transistors (HBTs) grown using this switching scheme showed excellent etch selectivity as well as dc characteristics

Keywords

III-V semiconductors; MOCVD; X-ray diffraction; etching; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; photoluminescence; semiconductor growth; semiconductor heterojunctions; semiconductor superlattices; transmission electron microscopy; vapour phase epitaxial growth; DC characteristics; HBTs; HRTEM; In_0.5Ga_0.5As; In_0.65Ga_0.15P_0.15As_0.85; InGaP-GaAs; InGaP/GaAs heterostructures; LP-MOCVD; double crystal X-ray diffraction; etch selectivity; group V switching times; heterojunction bipolar transistors; high resolution transmission electron microscopy; interfacial layers; low temperature photoluminescence; monolayer; optimization; Ash; Chemicals; Crystalline materials; Gallium arsenide; Laboratories; Lattices; Materials science and technology; Photoluminescence; Temperature sensors; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711571

Filename

711571