DocumentCode
2733604
Title
Dynamic Negative Bias Temperature Instability and Comprehensive Modeling in PMOS Body-Tied FinFETs
Author
Lee, Hyunjin ; Lee, Choong-Ho ; Park, Donggun ; Choi, Yang-Kyu
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon
fYear
2006
fDate
26-30 March 2006
Firstpage
725
Lastpage
726
Abstract
This paper presents a novel approach to estimate the rising and falling behavior of Nth-order on-state current by dynamic negative bias temperature instability (DNBTI). For the first time, a modified DNBTI model in PMOS body-tied FinFETs was proposed and compared with experimental data. The approach can provide a quick estimation of periodic DNBTI behavior by stress and recovery. The DNBTI behaviors dependent upon stress bias, fin width, body temperature, and substrate bias were analyzed. The proposed model closely matched with the measured static-lifetime
Keywords
MOSFET; semiconductor device models; stability; Nth-order on-state current; PMOS body-tied FinFET; body temperature; comprehensive modeling; dynamic negative bias temperature instability; fin width; static-lifetime; stress bias; substrate bias; Degradation; FinFETs; Guidelines; Negative bias temperature instability; Niobium compounds; Scalability; Stress measurement; Substrates; Titanium compounds; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-9498-4
Electronic_ISBN
0-7803-9499-2
Type
conf
DOI
10.1109/RELPHY.2006.251344
Filename
4017285
Link To Document