• DocumentCode
    2733604
  • Title

    Dynamic Negative Bias Temperature Instability and Comprehensive Modeling in PMOS Body-Tied FinFETs

  • Author

    Lee, Hyunjin ; Lee, Choong-Ho ; Park, Donggun ; Choi, Yang-Kyu

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon
  • fYear
    2006
  • fDate
    26-30 March 2006
  • Firstpage
    725
  • Lastpage
    726
  • Abstract
    This paper presents a novel approach to estimate the rising and falling behavior of Nth-order on-state current by dynamic negative bias temperature instability (DNBTI). For the first time, a modified DNBTI model in PMOS body-tied FinFETs was proposed and compared with experimental data. The approach can provide a quick estimation of periodic DNBTI behavior by stress and recovery. The DNBTI behaviors dependent upon stress bias, fin width, body temperature, and substrate bias were analyzed. The proposed model closely matched with the measured static-lifetime
  • Keywords
    MOSFET; semiconductor device models; stability; Nth-order on-state current; PMOS body-tied FinFET; body temperature; comprehensive modeling; dynamic negative bias temperature instability; fin width; static-lifetime; stress bias; substrate bias; Degradation; FinFETs; Guidelines; Negative bias temperature instability; Niobium compounds; Scalability; Stress measurement; Substrates; Titanium compounds; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2006. 44th Annual., IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-9498-4
  • Electronic_ISBN
    0-7803-9499-2
  • Type

    conf

  • DOI
    10.1109/RELPHY.2006.251344
  • Filename
    4017285