AlGaN/GaN-HEMTs for power applications up to 40 GHz

Author

Kiefer, R. ; Quay, R. ; Müller, S. ; Köhler, K. ; van Raay, F. ; Raynor, B. ; Pletschen, W. ; Massler, H. ; Ramberger, S. ; Mikulla, M. ; Weimann, G.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphysik, Freiburg, Germany

fYear

2002

fDate

6-8 Aug. 2002

Firstpage

502

Lastpage

504

Abstract

A 0.15 μm T-gate AlGaN/GaN-HEMT 2-inch technology has been developed. Transistors with 120 μm gatewidth show a peak transconductance of 300 mS/mm and cut-off frequencies f_t and f_max of 65 GHz and 149 GHz, respectively. Large periphery 720 μm gatewidth devices are capable of CW operation up to 40 GHz yielding an output power of 0.91 W and a linear gain of 6 dB at 35 GHz. To the authors´ knowledge these results represent the highest absolute power level so far achieved with a GaN-HEMT in the Ka-band.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; semiconductor technology; wide band gap semiconductors; 0.15 micron; 0.91 W; 120 micron; 149 GHz; 2 in; 300 mS/mm; 40 GHz; 6 dB; 65 GHz; 720 micron; AlGaN-GaN; AlGaN/GaN HEMTs; CW operation; EHF; HEMT two inch technology; Ka-band operation; MM-wave HEMT; T-gate HEMT; power applications; transconductance; Aluminum gallium nitride; Electrons; Gallium nitride; HEMTs; MODFETs; Power generation; Radio frequency; Silicon carbide; Substrates; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Print_ISBN

0-7803-7478-9

Type

conf

DOI

10.1109/LECHPD.2002.1146793

Filename

1146793