Title :
1.3 μm wavelength GaInAsP/InP distributed feedback lasers grown directly on grating substrates by solid source molecular beam epitaxy
Author :
Hwang, W.Y. ; Baillargeon, J.N. ; Chu, S.N.G. ; Sciortino, P.F. ; Cho, A.Y.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Successful growth of GaInAsP/InP multi-quantum well lasers directly on a distributed feedback (DFB) grating substrate using all solid source molecular beam epitaxy (MBE) was demonstrated. A 500 Å thick 1.12 μm wavelength GaInAsP planarization layer was first grown on the DFB gratings at an elevated temperature to create a smooth surface for subsequent layer growth. Transmission electron micrograph showed smooth interfaces after the growth of this GaInAsP planarization layer. Low threshold current density and high quantum efficiency were obtained from these index-coupled DFB lasers grown by solid source MBE
Keywords :
current density; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; 1.3 mum; GaInAsP planarization layer; GaInAsP-InP; TEM; distributed feedback lasers; grating substrates; index-coupled DFB lasers; layer growth; multi-quantum well lasers; quantum efficiency; smooth interfaces; solid source MBE; threshold current density; Distributed feedback devices; Gratings; Indium phosphide; Laser feedback; Molecular beam epitaxial growth; Planarization; Solid lasers; Substrates; Surface waves; Temperature;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711574
