DocumentCode
2734243
Title
Statistical modeling of high-frequency bipolar transistors
Author
Schroter, M. ; Wittkopf, H. ; Kraus, W.
Author_Institution
Dept. of ECE, Univ. of California San Diego, La Jolla, CA, USA
fYear
2005
fDate
9-11 Oct. 2005
Firstpage
54
Lastpage
61
Abstract
An overview on existing approaches for statistical modeling of bipolar transistors is given with emphasis on practically feasible statistical simulation of analog/h.f. circuits. A suitable approach is outlined and applied to both device simulation and experimental fab data.
Keywords
bipolar transistors; semiconductor device models; analog circuits; high-frequency bipolar transistors; high-frequency circuits; statistical modeling; statistical simulation; Analog circuits; Bipolar transistors; Circuit optimization; Circuit simulation; Costs; Design methodology; Integrated circuit modeling; Manufacturing processes; Predictive models; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN
0-7803-9309-0
Type
conf
DOI
10.1109/BIPOL.2005.1555200
Filename
1555200
Link To Document