DocumentCode
2734530
Title
A self-aligned vertical HBT for thin SOI SiGeC BiCMOS
Author
Avenier, G. ; Schwartzmann, T. ; Chevalier, P. ; Vandelle, B. ; Rubaldo, L. ; Dutartre, D. ; Boissonnet, L. ; Saguin, F. ; Pantel, R. ; Frégonèse, S. ; Maneux, C. ; Zimmer, T. ; Chantre, A.
fYear
2005
fDate
9-11 Oct. 2005
Firstpage
128
Lastpage
131
Abstract
We demonstrate a 4-mask HBT module, which enables the integration of three high performance self-aligned SiGeC HBTs into a 0.13μm SOI CMOS technology. Static and dynamic transistor characteristics are described and compared with simulation results and bulk device performances.
Keywords
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; silicon-on-insulator; 0.13 micron; 4-mask HBT module; SOI CMOS technology; SiGeC; dynamic transistor characteristics; heterojunction bipolar transistor; self-aligned vertical HBT; silicon-on-insulator technology; static transistor characteristics; thin SOI BiCMOS; BiCMOS integrated circuits; CMOS process; CMOS technology; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Radio frequency; Radiofrequency identification; Silicon on insulator technology; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN
0-7803-9309-0
Type
conf
DOI
10.1109/BIPOL.2005.1555216
Filename
1555216
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