DocumentCode
2735013
Title
Interfacial failure Analysis of CdZnTe detectors by Scanning Acoustic Microscopy and Auger Electron Spectrum
Author
Qi, Zhang ; Wenbin, Sang ; Kaifeng, Qin ; Jiahua, Min ; Jianyong, Teng ; Jun, Xia
Author_Institution
Shanghai Univ.
fYear
2005
fDate
27-29 June 2005
Firstpage
1
Lastpage
4
Abstract
The contacts of CdZnTe detectors are rather complicated in their structure and the common failures or instabilities observed depend largely on the quality of the contacts. However, few works has been reported on the failure analysis of the interfacial layers between the contact and CdZnTe surface. In this paper, scanning acoustic microscopy (SAM) has been adopted to characterize these contact layers. By measuring the acoustic signal at various points of contacted samples, information on the surface uniformity can be obtained. These measurements have also been complemented by Auger electron spectrum (AES) measurements, giving the chemical distribution in the near-surface region of the elements of interest
Keywords
Auger electron spectra; III-VI semiconductors; acoustic microscopy; cadmium compounds; failure analysis; photodetectors; tellurium compounds; zinc compounds; AES measurements; Auger electron spectrum; CdZnTe; SAM; acoustic signal measurements; interfacial failure analysis; scanning acoustic microscopy; surface uniformity; Acoustic signal detection; Acoustic waves; Chemical elements; Failure analysis; Gamma ray detection; Gamma ray detectors; Scanning electron microscopy; Temperature; X-ray detection; X-ray detectors; AES; CdZnTe; Detectors; Scanning Acoustic Microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
High Density Microsystem Design and Packaging and Component Failure Analysis, 2005 Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-9292-2
Electronic_ISBN
0-7803-9293-0
Type
conf
DOI
10.1109/HDP.2005.251426
Filename
4017467
Link To Document