Title :
Impact of ballast resistor implementations on power performance of SiGe power HBTs
Author :
Jiang, Ningyue ; Ma, Zhenqiang ; Ma, Pingxi ; Reddy, Vijay ; Racanelli, Marco
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
SiGe power HBTs integrated in SiGe BiCMOS with different ballast schemes are developed and compared in terms of large-signal power performance. Design considerations of ballast resistors for SiGe power HBTs are investigated for both common-emitter (CE) and common-base (CB) configurations. The investigation shows that emitter ballast resistors or base ballast resistors should be judiciously used for SiGe power HBTs operating at different frequencies and under different configurations in order to extract the best RF performance from these devices.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; power bipolar transistors; resistors; BiCMOS integrated circuit; SiGe; ballast resistor implementations; base ballast resistors; common-base configuration; common-emitter configuration; emitter ballast resistors; power heterojunction bipolar transistor; BiCMOS integrated circuits; Capacitors; Electronic ballasts; Germanium silicon alloys; Heterojunction bipolar transistors; Radio frequency; Resistors; Silicon germanium; Thermal resistance; Thermal stability;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
DOI :
10.1109/BIPOL.2005.1555250
