DocumentCode :
2735089
Title :
NLDMOS RF optimization guidelines for wireless power amplifier applications
Author :
Szelag, B. ; Muller, D. ; Mourier, J. ; Judong, F. ; Giry, A. ; Pache, D. ; Monroy ; Roche, M.
Author_Institution :
Centre Commun de Microelectronique de Crolles, STMicroelectronics, Crolles, France
fYear :
2005
fDate :
9-11 Oct. 2005
Firstpage :
280
Lastpage :
283
Abstract :
LDMOSFET optimization for RF power applications is discussed. Starting from a quite standard transistor, a new architecture has been developed to reach high RF performances without sacrificing DC characteristics. The parasitic elements affecting the RF performances have been identified and reduced. The optimized device presents the following performances: BVds=15V, W.Ron lower than 3 Ohm.mm and fT larger than 30 GHz.
Keywords :
circuit optimisation; microwave power amplifiers; power MOSFET; 15 V; LDMOSFET optimization; NLDMOS RF optimization guidelines; RF power applications; power MOSFET; wireless power amplifier applications; CMOS technology; Guidelines; Immune system; MOSFETs; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency identification; Standards development; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Proceedings of the
Print_ISBN :
0-7803-9309-0
Type :
conf
DOI :
10.1109/BIPOL.2005.1555251
Filename :
1555251
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2735089
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