• DocumentCode
    273563
  • Title

    Fast high current switch for higher power switching power supplies

  • Author

    Alyas, M. ; Naylor, G.A. ; Lidgey, F.J.

  • Author_Institution
    Oxford Lasers Ltd., UK
  • fYear
    1988
  • fDate
    13-15 Jul 1988
  • Firstpage
    17
  • Lastpage
    20
  • Abstract
    In a high power switched mode supply (SMPS) there is a need for a high power switching device. Generally three types of semiconductor switching devices are used in this type of application, thyristors, bipolar junction transistor (BJTs) and field effect transistors (FETs). Thyristors can handle very high power, but suffer from relatively slow switching times, and are generally used at frequencies below 10 kHz. BJTs with high power handling capabilities are also slow, particularly high current devices, and maximum switching frequencies are typically under 50 kHz. FETs can be switched on and off very fast and can operate at frequencies above 100 kHz. However, their power handling at high voltages is not as good as thyristors or BJTs. The authors present a technique for paralleling two low cost, medium power BJTs driven by a single low voltage, high current FET to form a high voltage, high power, high speed switching module
  • Keywords
    bipolar transistors; field effect transistors; power supplies to apparatus; SMPS; bipolar junction transistor; fast high-current switch; field effect transistors; high current switch; high power switching device; high speed switching module; higher power switching power supplies; paralleling; semiconductor switching devices; switched mode supply; thyristors;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Power Electronics and Variable-Speed Drives, Third International Conference on
  • Conference_Location
    London
  • Print_ISBN
    0-85296-364-5
  • Type

    conf

  • Filename
    23304