DocumentCode
273563
Title
Fast high current switch for higher power switching power supplies
Author
Alyas, M. ; Naylor, G.A. ; Lidgey, F.J.
Author_Institution
Oxford Lasers Ltd., UK
fYear
1988
fDate
13-15 Jul 1988
Firstpage
17
Lastpage
20
Abstract
In a high power switched mode supply (SMPS) there is a need for a high power switching device. Generally three types of semiconductor switching devices are used in this type of application, thyristors, bipolar junction transistor (BJTs) and field effect transistors (FETs). Thyristors can handle very high power, but suffer from relatively slow switching times, and are generally used at frequencies below 10 kHz. BJTs with high power handling capabilities are also slow, particularly high current devices, and maximum switching frequencies are typically under 50 kHz. FETs can be switched on and off very fast and can operate at frequencies above 100 kHz. However, their power handling at high voltages is not as good as thyristors or BJTs. The authors present a technique for paralleling two low cost, medium power BJTs driven by a single low voltage, high current FET to form a high voltage, high power, high speed switching module
Keywords
bipolar transistors; field effect transistors; power supplies to apparatus; SMPS; bipolar junction transistor; fast high-current switch; field effect transistors; high current switch; high power switching device; high speed switching module; higher power switching power supplies; paralleling; semiconductor switching devices; switched mode supply; thyristors;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Variable-Speed Drives, Third International Conference on
Conference_Location
London
Print_ISBN
0-85296-364-5
Type
conf
Filename
23304
Link To Document