Title :
The Optimum Design of A Broad Band Low Noise Amplifier
Author :
Gao, Xinyan ; Xie, Wenkai
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu
Abstract :
An optimum design of a low noise amplifier (LNA) in S microwave band working at 2-4 GHz is described in this paper. Choosing FHC40LG HEMT (high electronic mobility transistor), the noise factor of the designed amplifier simulated by Microwave Office is no more than 1.5 dB, meanwhile the gain is no less than 20 dB in the given bandwidth. The simulated results agree with the performance of the transistor itself well considering its own minimum noise factor (0.3 dB) and associated gain (15.5 dB). Simultaneously, the stability factor of the designed amplifier is no less than 1 in the given bandwidth.
Keywords :
HEMT integrated circuits; MMIC amplifiers; UHF amplifiers; low noise amplifiers; FHC40LG HEMT; Microwave Office simulator; broad band low noise amplifier; frequency 2 GHz to 4 GHz; gain 15.5 dB; high electronic mobility transistor; noise factor; optimum design; stability factor; Bandwidth; Circuit noise; Circuit simulation; Electromagnetic interference; High power amplifiers; Low-noise amplifiers; Microwave FETs; Microwave amplifiers; Microwave circuits; Microwave transistors;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368300
