Title :
A 3–5 GHz ultra-wideband low noise amplifier employing noise cancellation
Author :
You, Lan ; Wang, Chuan ; Liu, Falin
Author_Institution :
Dept. of Electron. Eng. & Inf. Sci., USTC, Hefei, China
Abstract :
A low noise amplifier (LNA) is proposed for a 35GHz ultra-wideband (UWB) system. The combination of a common-gate (CG) input stage and a common-source (CS) input cascode stage is exploited with a modified form of noise cancellation. The proposed LNA is implemented in a 0.18μm CMOS technology and achieves a power gain of 18dB, an average noise figure of 3.3dB, and better than -11dB of input/output matching, while consuming only 8mW at 1.8V supply. And the chip area is as small as 0.48 mm2.
Keywords :
CMOS integrated circuits; interference suppression; low noise amplifiers; microwave amplifiers; microwave integrated circuits; CMOS technology; LNA; common-source input cascode stage; frequency 3 GHz to 5 GHz; gain 18 dB; noise cancellation; noise figure 3.3 dB; power 8 mW; size 0.18 mum; ultrawideband low noise amplifier; voltage 1.8 V; Bandwidth; CMOS integrated circuits; Impedance; Impedance matching; Noise; Transistors; Ultra wideband technology; CMOS; Low noise amplifier; noise cancellation; ultra-wideband;
Conference_Titel :
Ultra-Wideband (ICUWB), 2010 IEEE International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-5305-4
Electronic_ISBN :
978-1-4244-5306-1
DOI :
10.1109/ICUWB.2010.5614353