Title :
Simulation of chemical beam epitaxy with triethylgallium and tris(dimethylamino) arsine
Author :
Shi, B.Q. ; Tu, C.W.
Author_Institution :
Dept. of Chem. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
A reaction model for the epitaxial growth of GaAs by chemical beam epitaxy using triethylgallium and tris(dimethylamino) arsine is presented. The model is developed by properly combining surface decomposition mechanisms of the two metalorganic species. Computer simulations based on the model are carried out to make comparison with the experimental observations for this growth system. The model is shown to provide very good agreement with the growth kinetics observed
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; semiconductor epitaxial layers; semiconductor growth; semiconductor process modelling; GaAs; chemical beam epitaxy; computer simulations; growth kinetics; reaction model; surface decomposition; triethylgallium; tris(dimethylamino) arsine; Atomic measurements; Chemicals; Epitaxial growth; Gallium arsenide; Hydrogen; Kinetic theory; Molecular beam epitaxial growth; Semiconductor process modeling; Temperature; Vacuum technology;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711600
