Title :
An efficient physical model of transferred electron devices for circuit analysis applications
Author :
Ren, Chuansheng ; Xue, Hongxi ; Howes, Michael J.
Author_Institution :
Centre for Commun. Res., Bristol Univ., UK
Abstract :
A fast numerical simulation program of transferred electron devices (TEDs), including the drift-diffusion (DD) and the energy-momentum (EM) models, is presented. The program runs on a PC (486-33 MHz-DX), which makes the device modelling very efficient. The two models are experimentally verified by both the DC and AC characterisations of X-band devices. Finally, the results are discussed
Keywords :
Gunn devices; microwave devices; semiconductor device models; 486-33 MHz-DX PC; AC characteristics; DC characteristics; X-band; circuit analysis; drift-diffusion model; energy-momentum model; numerical simulation; transferred electron devices;
Conference_Titel :
Physical Modelling of Semiconductor Devices, IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19950426
