DocumentCode
2736550
Title
Fabrications and Characterizations of NbN/AlN/NbN Junctions for THz Applications
Author
Liu, X. ; Kang, L. ; Sun, J. ; Chang, L. ; Zhao, S.Q. ; Ji, Z.M. ; Wu, P.H.
Author_Institution
Nanjing Univ., Nanjing
fYear
2006
fDate
18-22 Sept. 2006
Firstpage
140
Lastpage
140
Abstract
We present our process for fabricating NbN/AlN/NbN tunnel junctions on MgO substrates. The current-voltage (I-V) characteristics of junctions were measured, and together with the other characteristics in high frequency, especially in the terahertz band.
Keywords
III-V semiconductors; aluminium compounds; magnesium compounds; millimetre wave mixers; niobium compounds; sputtering; superconductive tunnelling; wide band gap semiconductors; MgO; MgO substrates; NbN-AlN-NbN; NbN/AlN/NbN tunnel junctions; THz applications; current-voltage characteristics; Current measurement; Fabrication; Josephson junctions; Lithography; Probes; Radio frequency; Sputtering; Substrates; Superconducting devices; Superconducting magnets;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0400-2
Electronic_ISBN
1-4244-0400-2
Type
conf
DOI
10.1109/ICIMW.2006.368348
Filename
4222082
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