THz Emitters and Detectors Based on Ion Implanted III-V Semiconductors

Author

Lloyd-Hughes, J. ; Fu, L. ; Castro-Camus, E. ; Merchant, S. ; Tan, H.H. ; Jagadish, C. ; Johnston, M.B.

Author_Institution

Oxford Univ., Oxford

fYear

2006

fDate

18-22 Sept. 2006

Firstpage

149

Lastpage

149

Abstract

Ultrafast charge carrier dynamics in semiconducting materials ultimately determine the performance of photoconductive terahertz (THz) emitters and receivers. Ion implantation of III-V semiconductors allows carrier dynamics to be tailored for a particular application, and thus the technique is increasingly being applied to the development of advanced materials for terahertz photonics. In this talk I will briefly introduce the technique of ion implantation and review some recent applications in THz photonics. 1 will then present time resolved conductivity studies of GaAs:As⁺, InGaAs:Fe⁺, InP:O⁺ and InP:Fe⁺ and relate these results to improved terahertz emitter and detector performance.

Keywords

III-V semiconductors; arsenic; gallium arsenide; indium compounds; ion implantation; iron; submillimetre wave detectors; GaAs:As; III-V semiconductors; InGaAs:Fe; InP:Fe; InP:O; THz detectors; THz emitters; THz photonics; charge carrier dynamics; ion implantation; photoconductive emitters; receivers; terahertz photonics; time resolved conductivity; Charge carriers; Conducting materials; Detectors; III-V semiconductor materials; Ion implantation; Optical receivers; Photoconducting devices; Photoconducting materials; Photonics; Semiconductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0400-2

Electronic_ISBN

1-4244-0400-2

Type

conf

DOI

10.1109/ICIMW.2006.368357

Filename

4222091