Title :
A High Efficiency ALL-PMOS Charge Pump for Low-Voltage Operations
Author :
Yan, Na ; Min, Hao
Author_Institution :
ASIC, Fudan Univ., Shanghai
Abstract :
This paper presents a high performance ALL-PMOS charge pump suitable for implementation in standard CMOS processes. And only low voltage PMOS transistors are used. With the switching substrate technique and boosted transistor, the influence of body effect is eliminated and output voltage is greatly increased. A twelve-stage charge pump circuit is fabricated in a 0.35-mum double-poly CMOS technology. Measurements at 3MHz have shown that for power supply voltages of 2 V, 1.5V and 1V an output voltage of 15.5V, 10.4V and 3.6V can be generated respectively
Keywords :
CMOS integrated circuits; MOSFET; low-power electronics; 0.35 micron; 1 V; 1.5 V; 10.4 V; 15.5 V; 2 V; 3 MHz; 3.6 V; CMOS processes; PMOS charge pump; PMOS transistors; boosted transistor; power efficiency; switching substrate technique; Application specific integrated circuits; CMOS process; CMOS technology; Capacitors; Charge pumps; Clocks; Diodes; Low voltage; MOSFETs; Threshold voltage; Charge pump; boosted transistor; low voltage; number of stage; power efficiency; standard CMOS process;
Conference_Titel :
Asian Solid-State Circuits Conference, 2005
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-9162-4
Electronic_ISBN :
0-7803-9163-2
DOI :
10.1109/ASSCC.2005.251740
