Broadband Anti-Reflective Structure with Mesoporous Silica of Low Refractive Index in Si Solar Panels

Author

Shieh, Jia-Min ; Liu, Li-Jung ; Shiao, Jui-Chung ; Wang, Chao-Kei ; Wu, Shich-Chuan ; Yu, Wen-Chien ; Kuo, Hao-Chung ; Liu, Shia Chia ; Lai, Yi-Fan ; Hsiang, Kuo-Chen ; Chen, Yen-Chang

fYear

2008

fDate

18-21 Aug. 2008

Firstpage

63

Lastpage

66

Abstract

Mesoporus silica dielectrics, which revealed low refractive index (n~1.26), were introduced together with Si₃N₄ layers to be double-layer-based graded-refractive-index anti- reflectors for silicon solar-cells. Enhanced solar-light transmission increased conversion efficiency of Si solar panels by 4%. The degradation in photovoltaic efficiency of solar panels that were covered with Si₃N₄/MS anti-reflectors was as small as 0.54 % after 60 hours of irradiation. MS films revealed wide band-gap of 6.4 eV and, therefore, negligible absorption in the solar spectrum, in response to highly stable photovoltaic efficiency during long-term irradiation.

Keywords

antireflection coatings; dielectric materials; elemental semiconductors; mesoporous materials; refractive index; silicon; silicon compounds; solar cells; Si; SiO₂-Si₃N₄; broadband antireflective structure; conversion efficiency; double-layer-based graded-refractive-index antireflectors; long-term irradiation; mesoporus silica dielectrics; photovoltaic efficiency; refractive index; silicon solar-cells; solar panels; solar-light transmission; time 60 h; wide band-gap; Absorption; Dielectric materials; Materials reliability; Mesoporous materials; Optical films; Optical refraction; Photovoltaic cells; Reflectivity; Refractive index; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2008. NANO '08. 8th IEEE Conference on

Conference_Location

Arlington, Texas

Print_ISBN

978-1-4244-2103-9

Electronic_ISBN

978-1-4244-2104-6

Type

conf

DOI

10.1109/NANO.2008.26

Filename

4617008