Title :
SiGe HBT based 24-GHz LNA and VCO for Short-Range Ultra-Wideband Radar Systems
Author :
Masuda, Toru ; Nakamura, Takahiro ; Tanabe, Masamichi ; Shiramizu, Nobuhiro ; Wada, Shin-ichiro ; Hashimoto, Takashi ; Washio, Katsuyoshi
Author_Institution :
Central Res. Lab., Hitachi, Tokyo
Abstract :
24-GHz low noise amplifier (LNA) and voltage controlled oscillator (VCO) in 0.25-mum SiGe BiCMOS technology were developed to create low-cost radio frequency (RF) modules for short-range ultra-wideband radar systems. A two-stage shunt-feedback LNA that used inductive biasing had a -3-dB bandwidth of 11.4 GHz, a noise figure of 3.8 dB at 24 GHz, and a group delay deviation within 21 ps (from 10 GHz to 30 GHz). The LC-tuned differential VCO, with a high quality-factor center-tapped inductor design, oscillated at 24 GHz with phase noise of -100 dBc/Hz at 1 MHz offset. The VCO core consumed only 2 mA of current
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; inductors; low noise amplifiers; microwave amplifiers; microwave oscillators; phase noise; ultra wideband radar; voltage-controlled oscillators; 0.25 micron; 10 to 30 GHz; 11.4 GHz; 2 mA; 3.8 dB; LC-tuned differential VCO; RF modules; SiGe; SiGe BiCMOS technology; SiGe HBT; center-tapped inductor design; group delay deviation; inductive biasing; low noise amplifier; noise figure; phase noise; quality factor; radio frequency modules; shunt-feedback LNA; ultra-wideband radar systems; voltage controlled oscillator; BiCMOS integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Radar; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Ultra wideband technology; Voltage-controlled oscillators;
Conference_Titel :
Asian Solid-State Circuits Conference, 2005
Conference_Location :
Hsinchu
Print_ISBN :
0-7803-9162-4
Electronic_ISBN :
0-7803-9163-2
DOI :
10.1109/ASSCC.2005.251756
