Title :
High performance InGaN/GaN dot-in-a-wire light emitting diodes on Si(111)
Author :
Mi, Z. ; Nguyen, H.P.T. ; Zhang, S. ; Cui, K. ; Han, X.
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
Abstract :
We report on the epitaxial growth, fabrication, and characterization of full-color InGaN/GaN dot-in-a-wire nanoscale LEDs on Si(111), which can exhibit an internal quantum efficiency of ~ 45% and negligible saturation up to ~ 300 A/cm2.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanophotonics; semiconductor growth; semiconductor quantum dots; wide band gap semiconductors; InGaN-GaN; Si; internal quantum efficiency; light emitting diodes; nanoscale LED; saturation; semiconductor dot-in-a-wire; Current measurement; Gallium nitride; Light emitting diodes; Silicon; Substrates; Temperature; Temperature measurement;
Conference_Titel :
Winter Topicals (WTM), 2011 IEEE
Conference_Location :
Keystone, CO
Print_ISBN :
978-1-4244-8428-7
DOI :
10.1109/PHOTWTM.2011.5730039
