Title :
Fabrication and characteristics of CuInSe2/CuIn(SexS1−x)2 structure by the sulfurization of CuInSe2 thin film
Author :
Guo, Jhe Wei ; Hsieh, Tung Po ; Wu, Chung Shin ; Chang, Jen Chuan ; Hsu, Shu Chun ; Sheng, Pei Sun ; Chuang, Chia Chih
Author_Institution :
Photovoltaics Technol. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
CuInSe2/CuIn(SexS1-x)2 structures have been fabricated on Mo/Glass substrate using Cu-poor or Cu-rich CuInSe2 thin film by RTP sulfurization at high temperature. The surface morphologies of CuInSe2 thin films could be changed with varied S amounts or ratio of Se/S during sulfurization. In our experimental results, the CuInSe2/CuIn(SexS1-x)2 structure was easy formed based on Cu-rich CuInSe2 thin film and the CuxSe phase was helpful to produce CuIn(SexS1-x)2 film onto CISe film. But, the second phase (CuxSe) must be etching in KCN solution after sulfurization of CuInSe2/CuIn(SexS1-x)2 structures. The high quality and high open circuit voltage of chalcopyrite absorber had been made by co-evaporation and RTP sulfurization in this study.
Keywords :
copper compounds; etching; indium compounds; semiconductor growth; semiconductor thin films; surface morphology; ternary semiconductors; vacuum deposition; wide band gap semiconductors; CuInSe2-CuIn(SexS1-x)2; chalcopyrite absorber; co-evaporation; double layer absorber; etching; open circuit voltage; rapid thermal process; sulfurization; surface morphologies; thin film; Gallium; Glass; Powders; Surface treatment; X-ray scattering;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5890-5
DOI :
10.1109/PVSC.2010.5614553
