Modeling of Carbon Nanotube Schottky Diode Based on Coaxial Geometry

The coaxial carbon nanotube Schottky diode is presented. It is demonstrated when in the coaxial geometry with two different Schottky contacts, only the hole carriers (p-type carriers) are considered, the device shows typical diode characteristic. To achieve the current-voltage characteristic of the diode, the WKB approximation and Ballistic transport are applied. The effects of change of three parameters: the gate voltage, band gap, and oxide thickness on the diode characteristic are investigated. It is shown the threshold voltage depends on the gate voltage and band gap. These factors affect the threshold voltage inversely. Moreover, the diode resistance decreases when these parameters increase. Finally, it is demonstrated, the change of the oxide thickness almost has not any effect on the threshold voltage while it affects the diode resistance.