DocumentCode :
2739174
Title :
InGaN SCH-MQW Laser Diodes With Ascleaved Facets
Author :
Onomura, M. ; Nishio, J. ; Saito, S. ; Nunoue, S. ; Hatakoshi, G.
Author_Institution :
Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, JAPAN
fYear :
1997
fDate :
14-18 July 1997
Firstpage :
286
Lastpage :
286
Keywords :
Diode lasers; Laboratories; Laser theory; Mirrors; Optical losses; Optical materials; Optical saturation; Quantum well devices; Quantum well lasers; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1997. CLEO/Pacific Rim '97., Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-3889-8
Type :
conf
DOI :
10.1109/CLEOPR.1997.610984
Filename :
610984
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2739174
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