DocumentCode :
273932
Title :
An improved CMOS current mirror using a bulk-effect independent cascode biasing structure
Author :
Steyaert, M.
Author_Institution :
Katholieke Univ., Leuven, Belgium
fYear :
1989
fDate :
5-8 Sep 1989
Firstpage :
656
Lastpage :
660
Abstract :
To reduce the channel length modulation effect, a cascode structure is very often used in current mirrors. However, this technique requires a correct biasing of the cascode transistor. The author presents a biasing structure which always guarantees the correct biasing under any process variations (parameter variations from chip to chip) or any bulk effect and ensures that all the transistors are always biased just in saturation. As a result a current mirror is realized which has a maximum voltage output swing and a very high current mirror accuracy
Keywords :
CMOS integrated circuits; amplifiers; linear integrated circuits; CMOS current mirror; bulk-effect independent cascode biasing structure; channel length modulation effect-reduction; linear IC; maximum voltage output swing; transistor saturation;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Circuit Theory and Design, 1989., European Conference on
Conference_Location :
Brighton
Type :
conf
Filename :
51702
Link To Document :
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