DocumentCode
273932
Title
An improved CMOS current mirror using a bulk-effect independent cascode biasing structure
Author
Steyaert, M.
Author_Institution
Katholieke Univ., Leuven, Belgium
fYear
1989
fDate
5-8 Sep 1989
Firstpage
656
Lastpage
660
Abstract
To reduce the channel length modulation effect, a cascode structure is very often used in current mirrors. However, this technique requires a correct biasing of the cascode transistor. The author presents a biasing structure which always guarantees the correct biasing under any process variations (parameter variations from chip to chip) or any bulk effect and ensures that all the transistors are always biased just in saturation. As a result a current mirror is realized which has a maximum voltage output swing and a very high current mirror accuracy
Keywords
CMOS integrated circuits; amplifiers; linear integrated circuits; CMOS current mirror; bulk-effect independent cascode biasing structure; channel length modulation effect-reduction; linear IC; maximum voltage output swing; transistor saturation;
fLanguage
English
Publisher
iet
Conference_Titel
Circuit Theory and Design, 1989., European Conference on
Conference_Location
Brighton
Type
conf
Filename
51702
Link To Document