DocumentCode :
2739790
Title :
III–V-on-silicon hybrid integration, materials, devices, and applications
Author :
Liang, Di ; Fiorentino, Marco ; Bowers, John E. ; Beausoleil, Raymond G.
Author_Institution :
HP Labs., Palo Alto, CA, USA
fYear :
2011
fDate :
10-12 Jan. 2011
Firstpage :
151
Lastpage :
152
Abstract :
Hybrid integration of III-V compound semiconductors onto silicon-on-insulator (SOI) substrate is discussed from material, device and application perspective. Recent progress in integration technology and device optimization is reviewed.
Keywords :
III-V semiconductors; indium compounds; optical fabrication; optical interconnections; optical materials; optical modulation; reviews; ring lasers; semiconductor epitaxial layers; semiconductor lasers; silicon-on-insulator; III-V compound semiconductors; InP-Si; device optimization; hybrid integration; review; silicon-on-insulator; Bonding; Optical waveguides; Photonics; Silicon; Substrates; USA Councils;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Winter Topicals (WTM), 2011 IEEE
Conference_Location :
Keystone, CO
Print_ISBN :
978-1-4244-8428-7
Type :
conf
DOI :
10.1109/PHOTWTM.2011.5730092
Filename :
5730092
Link To Document :
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