A Miniature Heat-Dissipation Packaging Design for GaInP Collector-Up HBTs as High-Power Amplifiers in Cellular Phone Systems

A heat-dissipation packaging configuration of GaInP collector-up (C-up) heterojunction bipolar transistors (HBTs) has been designed and evaluated systematically. 2-D and 3-D finite-element modeling (FEM) approaches are built up to simulate the actual devices and to analyze the temperature distribution behavior. The results show that the reported configuration can be further reduced by 42%. Therefore, thinning the thermal-via structure constructed in GaInP collector-up HBTs should be useful for miniaturization of high-power amplifier (HPA) designs, and the developed FEM method can be very effective for optimizing HBT-based HPAs in future cellular phone systems.