Model of photoluminescence of InAs quantum dots embedded in indirect band gap AlGaAs matrices

Author

Shamirzaev, T.S. ; Gilinsky, A.M. ; Toropov, A.I. ; Bakarov, A.K. ; Tenne, D.A. ; Zhuravlev, K.S. ; Schulze, S. ; von Borczyskowski, C. ; Zahn, D.R.T.

Author_Institution

Inst. of Semicond. Phys., Novosibirsk, Russia

Volume

3

fYear

2004

fDate

26 June-3 July 2004

Firstpage

157

Abstract

Photoluminescence kinetics in InAs quantum dots embedded in indirect-gap AlGaAs matrices has been studied. It has been found that the duration of the photoluminescence decay at low temperatures greatly decreases from milliseconds down to nanoseconds with decreasing the AlAs fraction in the AlGaAs matrix. The experimental results are interpreted in the framework of a model that takes into account an exchange splitting of excitonic levels in the quantum dots.

Keywords

III-V semiconductors; aluminium compounds; energy gap; excitons; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; AlGaAs; InAs; excitonic levels; indirect band gap; photoluminescence decay; photoluminescence kinetics; quantum dots; Charge carrier processes; Gallium arsenide; Kinetic theory; Optical device fabrication; Photoluminescence; Photonic band gap; Quantum dots; Radiative recombination; Temperature; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Science and Technology, 2004. KORUS 2004. Proceedings. The 8th Russian-Korean International Symposium on

Print_ISBN

0-7803-8383-4

Type

conf

DOI

10.1109/KORUS.2004.1555708

Filename

1555708