DocumentCode
274129
Title
Ferroelectric connections for IC neural networks
Author
Clark, L.T. ; Grondin, R.O. ; Dey, S.K.
Author_Institution
Arizona State Univ., Tempe, AZ, USA
fYear
1989
fDate
16-18 Oct 1989
Firstpage
47
Lastpage
51
Abstract
The application of ferroelectric thin-film technology to the construction of electrically-alterable synapse elements for artificial neural net applications is discussed. The ferroelectric film resides above the active circuitry, allowing high density. Firstly, a binary connection scheme supporting limited connectivity but utilizing a ferroelectric characteristic which is currently used in production memory circuits is presented. Secondly, a synaptic connection element supporting continuous weight values is described
Keywords
ferroelectric devices; integrated circuit technology; neural nets; thin film devices; IC neural networks; binary connection scheme; electrically-alterable synapse elements; ferroelectric thin-film technology; limited connectivity; memory circuits; synaptic connection element;
fLanguage
English
Publisher
iet
Conference_Titel
Artificial Neural Networks, 1989., First IEE International Conference on (Conf. Publ. No. 313)
Conference_Location
London
Type
conf
Filename
51928
Link To Document