Title :
ECR-MBE growth and high excitation properties of GaInN/GaN heterostructures
Author :
Muller, J. ; Lipinski, M. ; Maksimov, A. ; Forchel, A.
Author_Institution :
Inst. for Tech. Phys., Wurzburg Univ., Germany
Abstract :
We have developed a method to reduce plasma self biasing effects during ECR-MBE growth of GaN based on an external magnet positioned on the axis to the ECR source. With this method it is possible to increase the growth rate up to 0.7 μm/h by using high microwave powers (up to 200 W) to increase the density of excited nitrogen. With this method we have realized GaN and GaInN/GaN QW structures with high optical efficiency. The GaN layers show strong excitonic emission with line widths below 5 meV and no yellow luminescence. Optically pumped stimulated emission in stripe excitation geometry (threshold pumping intensity ~1 MWcm2) was realized up to room temperature
Keywords :
III-V semiconductors; excitons; gallium compounds; indium compounds; molecular beam epitaxial growth; optical pumping; photoluminescence; plasma deposition; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wells; spectral line breadth; stimulated emission; 200 W; ECR-MBE growth; GaInN-GaN; GaInN/GaN heterostructures; QW structure; excited N density; excitonic emission line widths; external magnet position; growth rate; high excitation properties; high microwave power; high optical efficiency; layers; optically pumped stimulated emission; plasma self biasing effects; stripe excitation geometry; strong excitonic emission; threshold pumping intensity; Gallium nitride; Geometrical optics; Luminescence; Microwave theory and techniques; Nitrogen; Optical pumping; Plasma properties; Plasma sources; Plasma temperature; Stimulated emission;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711657
