Optical metastability in InGaN/GaN heterostructures

Author

Shmagin, I.K. ; Muth, J.F. ; Kolbas, A.A. ; Dupuis, R.D. ; Grudowski, P.A. ; Eiting, C.J. ; Park, J. ; Shelton, B.S. ; Lambert, D.J.H.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

1997

fDate

8-11 Sep 1997

Firstpage

375

Lastpage

378

Abstract

Optical metastability was studied in an InGaN/GaN single heterostructure. It was observed that an exposure to a high intensity ultraviolet (UV) light temporarily changes the optical properties of the InGaN/GaN epitaxial layer. The photo-induced changes were used to create high contrast optical patterns on the sample at room temperature and 77 K. The photo-induced patterns were viewed under low-intensity illumination with UV light from the same light source

Keywords

III-V semiconductors; gallium compounds; indium compounds; optical properties; photoluminescence; semiconductor epitaxial layers; semiconductor heterojunctions; ultraviolet radiation effects; 300 K; 77 K; InGaN-GaN; InGaN/GaN heterostructure; epitaxial layer; high contrast optical patterns; high intensity UV light exposure; optical metastability; optical properties; photo-induced changes; photo-induced patterns; Frequency; Gallium nitride; Laser beams; Metastasis; Optical films; Optical harmonic generation; Optical microscopy; Photoluminescence; Pulse measurements; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 1997 IEEE International Symposium on

Conference_Location

San Diego, CA

Print_ISBN

0-7503-0556-8

Type

conf

DOI

10.1109/ISCS.1998.711658

Filename

711658