Title :
Position-dependent Photoluminescence Across a PN junction Formed on P-type HgCdTe by Ion-milling Technique
Author :
Zha, F.-X. ; Shao, J. ; Lu, X. ; Ji, R.B.
Author_Institution :
Kunming Inst. of Phys., Kunming
Abstract :
Photoluminescence spectroscopy was used to characterize a PN junction device formed on p-type mercury-cadmium-telluride (HgCdTe) material by ion-milling technique [1]. It was observed that the luminescence peak of the ion-eroded region shifted strongly to shorter wavelength.
Keywords :
II-VI semiconductors; cadmium alloys; mercury alloys; photoluminescence; tellurium alloys; HgCdTe; PN junction; ion-milling technique; mercury-cadmium-telluride; photoluminescence spectroscopy; position-dependent photoluminescence; Conducting materials; Current measurement; Laser beams; Luminescence; Material properties; Photoluminescence; Photonic band gap; Physics; Spectroscopy; Wavelength measurement;
Conference_Titel :
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0400-2
Electronic_ISBN :
1-4244-0400-2
DOI :
10.1109/ICIMW.2006.368696
