An optically-powered current source operating under cryogenic conditions

Author

Gran, J. ; Lind, K.

Author_Institution

Justervesenet (JV), Norway

fYear

2012

fDate

1-6 July 2012

Firstpage

56

Lastpage

57

Abstract

This paper describes preliminary test results for a current source operating at cryogenic temperatures (4.2 K). The current source is powered through optical fibres transmitting light from diode lasers operating at temperatures around 300K. The current source has been built from commercial InGaAs and Si photodiodes. The source has been constructed primarily to serve as galvanically isolated bias current source for segmented arrays of Josephson junctions. Current levels obtained at 4 K are in the range of 10 mA.

Keywords

III-V semiconductors; constant current sources; cryogenic electronics; elemental semiconductors; fibre lasers; gallium arsenide; indium compounds; photodiodes; semiconductor lasers; silicon; superconducting junction devices; InGaAs; Josephson junction segmented array; Si; cryogenic temperature condition; current 10 mA; diode laser; galvanically isolated bias current source; light transmission; optical fibre; optically-powered current source operation; photodiode; temperature 4 K; temperature 4.2 K; Cryogenics; Indium gallium arsenide; Optical fibers; Photodiodes; Semiconductor lasers; Silicon; Voltage measurement; Josephson Array; Optical current source; Si and InGaAs photodiodes; cryogenic temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements (CPEM), 2012 Conference on

Conference_Location

Washington, DC

ISSN

0589-1485

Print_ISBN

978-1-4673-0439-9

Type

conf

DOI

10.1109/CPEM.2012.6250658

Filename

6250658