Title :
Improved high frequency performance by composite emitter AlGaAs/GaInP heterojunction bipolar transistors fabricated using chemical beam epitaxy
Author :
Park, J.W. ; Pavlidis, D. ; Mohammadi, S. ; Dua, C. ; Garcia, J.C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A new emitter design based on composite AlGaAs/GaInP approach is described which allows significant reduction of CBE and improved high frequency performance. Self-aligned composite AlGaAs/GaInP and traditional emitter design HBTs were fabricated on CBE layers grown with TBA/TBP precursors. CBE of composite emitter HBTs is significantly lower than for traditional designs and does not show significant variation with collector current. This leads to enhanced f τ characteristics for composite emitter HBT designs and confirms the theoretical expectations. The CBE achieved with the new designs was by at least 4 times lower than that of conventional transistors and resulted in 20% enhancement of cutoff frequency
Keywords :
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; AlGaAs-GaInP; AlGaAs/GaInP heterojunction bipolar transistor; TBA/TBP precursor; chemical beam epitaxy; collector current; cutoff frequency; fabrication; high frequency characteristics; self-aligned composite emitter; Capacitance; Chemicals; Cutoff frequency; Electron emission; Epitaxial growth; Etching; Gallium arsenide; Gold; Heterojunction bipolar transistors; Molecular beam epitaxial growth;
Conference_Titel :
Compound Semiconductors, 1997 IEEE International Symposium on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7503-0556-8
DOI :
10.1109/ISCS.1998.711687
