Title :
Locally adaptive multigrid method for 3D numerical investigation of semiconductor devices
Author :
Conradi, P. ; Schroeder, D.
Author_Institution :
Dept. of Tech. Electron., Tech. Univ., Hamburg-Harburg, West Germany
Abstract :
The authors present recent developments in the multigrid semiconductor device simulation program COGITO. A locally adaptive refinement strategy has been implemented. The electron and hole continuity equations have been incorporated into the solution procedure. Refinement criteria and interpolation topics are discussed in particular. The solution of a three-dimensional problem is presented. It is demonstrated that the Poisson equation in one to three dimensions for the zero-current case can be solved. Steep gradients are well resolved by adaptive refinement. The full classical equation system including the continuity equations can be solved in one dimension under a selected bias
Keywords :
circuit analysis computing; interpolation; semiconductor devices; 3D numerical investigation; Poisson equation; adaptive refinement strategy; electron continuity equations; hole continuity equations; interpolation; locally adaptive multigrid method; semiconductor devices; simulation program COGITO; steep gradients; Charge carrier processes; Computational modeling; Grid computing; Interpolation; Multigrid methods; Numerical analysis; Poisson equations; Semiconductor devices; Tree data structures; Very large scale integration;
Conference_Titel :
CompEuro '89., 'VLSI and Computer Peripherals. VLSI and Microelectronic Applications in Intelligent Peripherals and their Interconnection Networks', Proceedings.
Conference_Location :
Hamburg
Print_ISBN :
0-8186-1940-6
DOI :
10.1109/CMPEUR.1989.93482
