Recent progress and advanced technology of InGaAsP/InP OEICS for lightwave systems, lasers, detectors and HBTs

Author

Shibata, Jun ; Kajiwara, Takao

Author_Institution

Optoelectronics Lab., Matsushita Electric Ind. Co. Ltd., Osaka, Japan

fYear

1988

fDate

11-15 Sep 1988

Firstpage

17

Abstract

It has been just ten years since the first optoelectronic integrated circuit (OEIC) was demonstrated. Since then various OEIC´s, such as integration of a laser diode and its driving circuit and that of a photodetector and an amplifier, have been fabricated and presented. The OEIC´s, however, have not been applied to practical use since they have not exhibited overwhelming advantages compared to conventional discrete circuits. The authors present the current problems of OEIC´s, focusing especially on InGaAsP/InP OEIC´s for lightwave communication systems

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical communication equipment; optical links; photodetectors; semiconductor junction lasers; HBTs; III-V semiconductors; InGaAsP-InP; OEIC; amplifier; detectors; heterojunction bipolar transistors; laser diode; lasers; lightwave communication systems; lightwave systems; optoelectronic integrated circuit; photodetector;

fLanguage

English

Publisher

iet

Conference_Titel

Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)

Conference_Location

Brighton

Type

conf

Filename

93511