• DocumentCode
    2744889
  • Title

    Designing high-efficiency class-E LDMOS power amplifier

  • Author

    He Songbai ; Wang Huadong ; You Fei ; Liao Jichang ; Liu Meirui

  • Author_Institution
    Univ. of Electron. Sci. & Technol. of China, Chengdu
  • fYear
    2007
  • fDate
    11-13 July 2007
  • Firstpage
    369
  • Lastpage
    372
  • Abstract
    Multifunctional RF front ends need to transmit different types of signals while maintaining efficiency and signal quality, we show that switched mode class-E power amplifiers can achieve high efficiency at RF frequency. In this paper, a 20W class-E power amplifier has been designed using MRF21030. The input match network and output network has been simulated carefully and the output efficiency of power amplifier is 63%. Further more, the effect of Vdd and input power have also been analyzed.
  • Keywords
    power MOSFET; power amplifiers; class-E LDMOS power amplifier design; multifunctional radiofrequency front end; power 20 W; Reactive power; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communications, Circuits and Systems, 2007. ICCCAS 2007. International Conference on
  • Conference_Location
    Kokura
  • Print_ISBN
    978-1-4244-1473-4
  • Type

    conf

  • DOI
    10.1109/ICCCAS.2007.6250715
  • Filename
    6250715
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2744889