• DocumentCode
    274529
  • Title

    Extremely low threshold 1.3 μm DFB-PPIBH laser diode applied to 1 Gbit/sec zero-bias RZ modulation

  • Author

    Kakimoto, S. ; Ohkura, Y. ; Takemoto, A. ; Yoshida, N. ; Namizaki, H. ; Susaki, W. ; Shibayama, K.

  • Author_Institution
    LSI Res. & Dev. Lab., Mitsubishi Elect. Corp., Hyogo, Japan
  • fYear
    1988
  • fDate
    11-15 Sep 1988
  • Firstpage
    337
  • Abstract
    The extremely low threshold (Ith=3.1 mA) and stable single longitudinal mode (SMSR=40 dB) 1.3 μm DFB-PPIBH laser diode has been developed by the MOCVD/LPE hybrid process. Using this laser diode, the 1 Gbit/sec zero-bias RZ modulation has been successfully demonstrated
  • Keywords
    distributed feedback lasers; laser modes; laser transitions; liquid phase epitaxial growth; optical modulation; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1 Gbit/s; 1.3 micron; 3.1 mA; DFB-PPIBH laser diode; MOCVD/LPE hybrid process; extremely low threshold; stable single longitudinal mode; zero-bias RZ modulation;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Optical Communication, 1988. (ECOC 88). Fourteenth European Conference on (Conf. Publ. No.292)
  • Conference_Location
    Brighton
  • Type

    conf

  • Filename
    93590
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=274529